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New 900V GaN FET




 
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Author Topic: New 900V GaN FET  (Read 392 times)
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VE3ELQ
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« on: June 26, 2019, 07:32:20 AM »

Transphorm have recently introduced the TP90H050WS, a 900V 34A GaN in a TO247 common source package. With a Tr/Tf of 10ns and matched delays they should be fast enough for high efficiency class D or E at 4mhz. With a half bridge PW modulator running at 165V a pair of these FETs in co-phase driven by LM5134 or NCP81074 drivers should be good for up to 1KW carrier level with PEP to 4kw or more in a small simple RF deck.  Four would be awesome.  Coming soon to the major suppliers.  Plan to try a pair and see.

https://www.transphormusa.com/en/document/datasheet-tp90h050ws/

73s  Nigel
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ka1tdq
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« Reply #1 on: June 26, 2019, 10:53:33 PM »

It sounds to me that 24-FETs and a 30 lb block of aluminum will soon be outdated. 

Just build it big. Chics dig big things, and cars that boom!

Jon
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http://www.ka1tdq.radio
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