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Title: New 900V GaN FET Post by: VE3ELQ on June 26, 2019, 07:32:20 AM Transphorm have recently introduced the TP90H050WS, a 900V 34A GaN in a TO247 common source package. With a Tr/Tf of 10ns and matched delays they should be fast enough for high efficiency class D or E at 4mhz. With a half bridge PW modulator running at 165V a pair of these FETs in co-phase driven by LM5134 or NCP81074 drivers should be good for up to 1KW carrier level with PEP to 4kw or more in a small simple RF deck. Four would be awesome. Coming soon to the major suppliers. Plan to try a pair and see.
https://www.transphormusa.com/en/document/datasheet-tp90h050ws/ 73s Nigel Title: Re: New 900V GaN FET Post by: ka1tdq on June 26, 2019, 10:53:33 PM It sounds to me that 24-FETs and a 30 lb block of aluminum will soon be outdated. AMfone - Dedicated to Amplitude Modulation on the Amateur Radio Bands
Just build it big. Chics dig big things, and cars that boom! Jon |