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SiC FETS Article




 
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DMOD
AC0OB - A Place where Thermionic Emitters Rule!
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« on: January 04, 2021, 12:06:57 PM »

https://www.electronicdesign.com/power-management/whitepaper/21150383/stmicroelectronics-how-sic-transistors-can-improve-powerconversion-efficiency?oly_enc_id=3267B0827512C9X

Sent to me from Electronics Design.

Has anyone here used or tested SiC FETS as finals or in PDM stages or both?


Phil - AC0OB
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M0VRF
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« Reply #1 on: January 04, 2021, 12:33:32 PM »

Not worth using them in PDM as any old low Res FET will do.

The Cree SiCs are great for 160/80m and ok on 40m if you want to use those great big drivers but my NCPs get a bit toasty on 40 so stick to Transphorm GaN for that band.

I'm running a 200W carrier @ 96V and haven't had any probs.

I use 3R3 gate Res for SiC and nothing for GaN.

The GaNs will work on 20m

Folk seem hung up on 11N90s on here but they're obsolete and have no use in modern design! Pig to drive too, fine if you're used to valves I guess!

J.
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KQ6F
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« Reply #2 on: January 04, 2021, 01:31:58 PM »

I've been using the Cree SiC devices for four years with no problems whatsoever.  As has been pointed out, they are easy to drive, are fast, and with low Ron characteristics.  On 75M they run very cool (almost cold) which means a complete transmitter can be packaged in a small plastic cabinet (see attached).


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