All of the devices in the family have a internal gate resistances which are in approximately the same proportions (internal gate resistance V/S input capacitive reactance).
These devices show much promise for 40 meters. If they came out with a metalized gate version (similar to what IXYS does with standard MOSFETs today), the maximum frequency of operation could be quite a bit higher than it is currentl
Steve thanks for the analysis. I agree completely. I should have saved a frame grab of the gate waveforms at 8 mhz but as I remember they were pretty good looking with fast leading and trailing edges at 15 volts. And this was 1 driver for 3 FETs. I have some C2M0160120D 1200V 19A 160mohm FETs on order and plan to build a 4 FET deck. Will start with 40 meters and see how that works out with everything optimized.
73s Nigel