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New TP90H180PS GaN FET




 
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Author Topic: New TP90H180PS GaN FET  (Read 459 times)
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VE3ELQ
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« on: December 15, 2017, 09:15:26 AM »

DK now stock the latest HV switching GaN FET TP90H180PS by Transphorm. Its a 900/1kv 15A .17Ohm device with a Tr/Tf of 5/7 nsec. Should work very well on 40M and 80M in class D running 160V B+.  Plan to retro fit my 6 SiC FET 80M TX with a new RF deck using 4 of these FETs in the next few weeks. Very exciting news (at least for me)  Specs here:
http://www.transphormusa.com/document/datasheet-tp90h180ps-900v-gan-fet/

73s  Nigel
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WD5JKO
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WD5JKO


« Reply #1 on: December 15, 2017, 11:41:42 AM »



Looks like $11.06 USD each.....

http://tinyurl.com/y9v6ape8

The 78 watt dissipation rating makes me nervous though in case an accidental situation occurring.

Still, when a 572B costs north of $75 each, this SS stuff is the future.

Jim
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WBear2GCR
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Brrrr- it's cold in the shack! Fire up the BIG RIG


WWW
« Reply #2 on: December 15, 2017, 11:58:36 AM »

Best rethink that power rating thing!

The associated AP note (linked in the PDF itself) for paralleling two devices shows them in switching
application at powers up to 5kW!!! And at 98-99% efficiency!! Whoa!

They show 100 to 120watt "loss" at those power levels... aka "heat" aka "device dissipation!
So two at 78watts each = 156watts which is <120watts! Heh. Whaddya know!
(of course these are at 100kHz.)

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_-_- bear WB2GCR                   http://www.bearlabs.com
Tom WA3KLR
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« Reply #3 on: December 15, 2017, 02:18:31 PM »

TO-220 package, 1.6 C/Watt junction to case thermal resistance.

Most of the popular beefy FETs of the past are TO-247 or TO-3xx sporting thermal resistance junction to case of 0.4 - 0.6 degrees C/Watt.  There's the difference.

Murray Christmas
Mary Christmas
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73 de Tom WA3KLR  AMI # 77   Amplitude Modulation - a force Now and for the Future!
M0VRF
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« Reply #4 on: January 07, 2018, 12:42:49 PM »

Nice one Nige, I finally have a stable 4 GaN FET system using the new FETs.

I ONLY need a 200W carrier so am using 48V.

I too tried the Cree SiC's but they're not as efficient.

The GaN system is stone cold, quite wierd as the only thing getting hot is a 7805 reg!

I'm using a (eB) AD9850 DDS running at 3V driving the 4 X NCP drivers at 5V driving 4 X TP90H180 FETs @ 7MHz.

Measuring efficiency has been somewhat 'problematic' as dont have any attenuator over 100W but do have a KW load.

Using a BNC 'T' piece and a 100:1 probe I can measure the voltage but it's reading 20% lower than a 10:1 (calibrated) probe.

Was giving me a real headache as couldn't prove the efficiency.

However it's running so cold with 300V of RF (220W) it must be over 95% efficient..

Nice..

Thanks for the 'insperation' BTW.

Cheers

JB.



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