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Wow, check this: 1200V, 33A, 100mOhm 90nC gate charge MOSFET !




 
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Author Topic: Wow, check this: 1200V, 33A, 100mOhm 90nC gate charge MOSFET !  (Read 16737 times)
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N4LTA
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« Reply #25 on: March 14, 2013, 10:05:09 AM »

The large one is $29 at Newark and the 24 amp one is $14.

I would think you could build an outstanding and compact Class D amp for CW use with a pair of either.

Rectifying the power line directly could make a cheap power supply although a bit dangerous. 160 volts at 7-8 amps would be reasonable. about  1200 watts in and likely 90% efficiency or better. Over a KW out.
No modulation though.

I get about 500 Watts out with two FQA30N40s at 500 KHz CW. At that frequency, efficiency is very good.
They are rated 400 volts at 30 amps. I am running about 50 volts DC.

I am currently building a KW amp for both 500 KHz and 137 KHz to run at 50-60 volts DC.

Might buy a couple of the Cree transistors to test on a design for higher frequency.

Pat
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W3RSW
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Rick & "Roosevelt"


« Reply #26 on: March 14, 2013, 11:14:28 AM »

What with input attenuators , output coupling and all tha stuff, devices running RF in our service have to deal with shorted and infinite outputs or uP circuits to keep them whole.
-More real world derating?

Amazing how rugged and band agile a 4x1 seems now.
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RICK  *W3RSW*
Tom WA3KLR
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« Reply #27 on: March 14, 2013, 08:21:22 PM »

There’s a brand new third part in this Cree Z-FET family too.

C2M0080120D (called 2nd generation), TO-247-3, 1200 V, 20A, 80 mOhms, gate charge 49 n.

"The 80 mΩ MOSFET in a TO-247 package is intended as a lower cost, higher performance upgrade to the first generation CMF20120D".

Same RDSon and Id as the CMF20120D but half the gate charge and faster.

Digi-Key shows $16.67 in single quantity, but none in stock yet.
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73 de Tom WA3KLR  AMI # 77   Amplitude Modulation - a force Now and for the Future!
DMOD
AC0OB - A Place where Thermionic Emitters Rule!
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« Reply #28 on: March 14, 2013, 11:02:05 PM »

Good price, good potential specs but it appears the C2M0080120D hasn't been fully characterized as yet.

http://www.cree.com/power/products/1200v-sic-mosfet-packaged/packaged/~/media/Files/Cree/Power/Data%20Sheets/C2M0080120D.pdf

Phil - AC0OB
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John K5PRO
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« Reply #29 on: March 15, 2013, 03:54:20 PM »

And 2 years later, we just got a 8 transistor + driver board, 5500 watt class AB amplifier, at 200 Mhz,  running with Freescale MRFE6VP61K25HR6 LDMOS part. Water cooled. These are 1250 watt CW parts, 562 pf of Cin, 24 dB gain, about 35 amps at 50 V. They cost $244 each in small quantity, so this is just under $2000 of silicon. To get a small cavity and tube to do this, the cost would be more these days.
Yep, progress is being made.
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Steve - K4HX
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« Reply #30 on: March 21, 2013, 11:33:26 AM »

Cree and AWR are offering a Webinar:

The Design of Class F, Inverse Class F and Continuous Class F Power Amplifiers using Cree GaN HEMTs and AWR's Microwave Office
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