SiC-Mosfets

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DMOD:
SiC-Mosfets

This article may be of interest to those in this subforum.

https://www.digikey.com/en/articles/how-to-apply-third-generation-sic-mosfets-to-power-designs?utm_medium=email&utm_source=tnl&utm_campaign=128342_TNL2212A&utm_content=article2learnmore_US&utm_cid=11457732&mkt_tok=MTQ0LU5DQi0wMzAAAAGIhsUpI2q8SU1-1NZ82qciNPmGez7uGdCVI2dIpBinqPf3uVpx9upGgL73TLJ6oTZQ4tRQHU6bsEwk4LLzlGONIIOz3ivg99jCvwzFUZvivpI7LXOOl1IuCfqb

Phil

WD5JKO:

Hi all,

I work for a company near Boston that makes Ion Implant machines for use in the Semiconductor Industry.

The SIC wafer implants differ from Silicon wafer implants in a big way. One major difference is with SIC, the wafers are heated up to between 450 to 700 degrees Celsius prior to ion implant, whereas with Silicon, the wafers are usually cooled to be at 25 Celsius or less.

I attach a photo taken from that linked video. There is some neat video showing the ion implant process.

https://youtu.be/z4CR9d5QQIU

Jim
Wd5JKO

K9MB:
Interesting devices.
Looking at the specs, they look promising.
The only things that give pause to me are the Rg which is 10ohms. Clocking at a high speed would generate some heat there, and the SOA seems sharp and narrow.
I am looking at it as a possible replacement for the venerable old FQA11C90.
It has a much slower switch rate and higher input capacitance, but the SOA is broad giving it toughness under stress that explains it’s longevity.
Rg on the 11c90 is not published, but similar devices are about 3 ohms, I think.
The very large chip on the older device also helps with heat dissipation.
I expect that SIC and GaN will prevail in the end, however…

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